Hot phonon effects in silicon field-effect transistors

Abstract

An electron temperature model is used to estimate conditions for the onset of hot phonon effects in the n channel of a silicon field-effect transistor. The required power density for an appreciable hot phonon effect on the drift velocity increases with electron temperature in the range of interest. At an electron temperature of 7200 K, with 300-K lattice temperature, it is found to be in the range 3×1030-3×1031 eV/s cm3.