III-V: Replacing Si or more than moore?

Abstract

Frequency scaling is coming to an end because of thermal limits as shown in Fig. 1. As an alternative nFET channel material, III-V compound semiconductor has been under intensive investigation in the recent years, hope to provide higher performance and lower power devices. In this paper, we review the status of current III-V research, and discuss the challenges and opportunities for "Moore" and "more than Moore" applications. © 2010 IEEE.