Impact of Interface Traps and Zn Diffusion on Performance of Lateral Hybrid III-V/Si Photodetectors

Abstract

This paper attempts to gain insight into the physical mechanisms related to device performance of a recently reported hybrid III-V/Si waveguide-coupled photodetector with lateral current collection (LCC-PD) using coupled 3D optical and 2D electrical simulations. We demonstrate that Zn diffusion, a widely observed phenomenon for p-doped III-V materials, could increase the dark current and lower the responsivity. We also show that the dark current at low bias is related to e-type interface traps near the bottom of the n-i junction.