In-situ characterization of SiO2 deposition and growth for gate-oxides (Invited Paper)

Abstract

The use of SiO2 gate oxides with thicknesses of < 100 angstroms will put stringent requirements on the control of contamination during device manufacturing. It has been realized only recently that control of molecular contamination is as important for critical device films as control of particulates. We present in this paper an investigation of challenges of thin gate oxides, possible alternative oxide deposition schemes, and control of foreign molecular species, using an ultra-clean, integrated processing system with in-situ analysis capabilities. In particular, the interfacial region of thermal gate oxides is investigated, as well as the chemical vapor deposition of oxides from SiH4 and O2, and the incorporation of fluorine into gate oxides.