Abstract
A vertical sealed tube configuration has been used to deposit epitaxially Zn doped GaAs on Te doped substrates. The vapor grown junctions were characterized through capacitance measurements. Linearly graded, nonuniform, and abrupt impurity profiles were observed. The nature of these junctions is shown to correlate with the zinc dopant concentrations present in the vapor. The distribution of zinc between the vapor phase and solid GaAs were determined for the junction growth conditions, and this distribution was found to follow Henry's law for the range investigated. The results of these investigations indicate that autodoping phenomena are involved in producing the variety of junctions observed. © 1964, The Electrochemical Society, Inc. All rights reserved.