Inelastic electron scattering from ultrathin metallic films on Si(111)

Abstract

The resistivity of ultrathin metallic films on semiconductor surfaces can be obtained from inelastic electron scattering measurements. Illustrative applications to Au and Pd films on Si(111) and to Ag films on GaAs(111) are presented. A general discussion about the nature of the quasi-elastic peak in EELS from various surfaces is also presented. © 1986.