Injection laser writing on chalcogenide films

Abstract

The crystallization and amorphization of Te-As-Ge films with GaAs injection lasers has been investigated. Power density measurements for crystallization and amorphization are presented, and a reversemode write-read-erase cycle is demonstrated. The results show that direct bit storage is feasible with an injection laser-chalcogenide film system. © 1974 Optical Society of America.