Interface modifications for improving the adhesion of a-c:H films to metals

Abstract

The adhesion of diamondlike hard carbon films to silicide forming metals was improved by using an interfacial silicon film several atomic layers thick. The use of thicker (> 10 nm) silicon layers results in a decrease in the adhesion, probably due to a degradation of the structural integrity by excessive silicide formation. © 1988, Materials Research Society. All rights reserved.