Ionized magnetron sputtering for lining and filling trenches and vias

Abstract

The use of ionized magnetron PVD remedies some of the shortcomings of collimated sputtering. Sidewall coverage, low wafer heating and high deposition rates are some of the advantages gained by I-PVD. Conformal films within trenches and vias are obtainable by increasing ion energy in a controlled manner so as to permit both low energy directional deposition and higher energy resputtering. The two intrinsic advantages of I-PVD are that all depositing ions arrive at normal incidence (instead of just a small fraction) and the arrival energy of the depositing ions is controlled. Improved coverage results.