Junction-side up operation of (Al)GaInP lasers with very low threshold currents

Abstract

Strained (Al)GaInP quantum-well ridge lasers with AlGaAs cladding layers have been fabricated on a 5°-off oriented GaAs substrate. Owing to a heat spreading layer, the devices can be operated junction-side up with a CW threshold current of 13 mA. Singlemode operation is achieved up to power levels of 15mW for devices with uncoated facets.P. Unger, P. Roentgen and G. L. Bona (IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Riischlikon, Switzerland). © 1992, The Institution of Electrical Engineers. All rights reserved.