Lift-off process to build edge junction MIM active device arrays

Abstract

A novel fabrication process is presented for tantalum pentoxide MIM displays that allows edge junctions to be used without the parasitic elements required in previous processes. This process has large tolerance to photolithographic alignment error because the junction area is determined by the thickness of a thin-film deposition. Experimental devices show that the process can produce devices with the same junction parameters as previous fabrication procedures, and that it can be scaled to produce high-resolution displays.