Master-equation approach to stochastic models of crystal growth

Abstract

A master-equation approach is formulated to obtain kinetic equations for stochastic models of the crystal-vapor interface. The properties of two Ising-type models are studied in stable and metastable states. General transition probabilities for the adsorption and evaporation of atoms at the interface are introduced, which may account for different types of dynamic behavior. Marked dependence of the interface kinetics upon the details of the transition probabilities is found, in contrast to the case of homogeneous systems. © 1974 The American Physical Society.