Measurement of I—V Curves of Silicon-on-Insulator (SOI) MOSFET's Without Self-Heating

Abstract

A new method for measuring the output (ID-VD) characteristics of SOI MOSFET's without self-heating is described. The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 µm bulk and SOI MOSFET's with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of dc power is also illustrated. © 1995 IEEE