MESFET COMPATIBLE IMSM DETECTORS.

Abstract

Using high-speed fiber-optic links in computer communications requires the recovery of the low-level, high-speed, electrical signals generated in the photodiode. Not only is high-frequency, low-noise amplification needed but a very small coupling loop between the detector and amplifier is required to reduce the noise coupled inductively from nearby circuits. The interdigitated metal-semiconductor-metal detector (IMSM) is an attractive candidate for use in such integration due to its potential compatibility with most GaAs circuit processes and its potential high performance. A novel type of interdigitated metal-semiconductor-metal detector is described that uses a shallow implant to limit surface trapping, making it compatible with refractory gate MESFET processes. 5 refs.