Metal-antiferromagnetic-insulator transition in V2O3 alloys

Abstract

Electrical resistivity measurements are reported for a variety of (V1-xTix)2O3 and V2(1-y)O3 systems, with 0≤x<0.06 and 0≤y<0.01, in the range 20-300 K. The metal-antiferromagnetic-insulator transition temperature TN diminishes steadily with increasing x and y and drops abruptly to zero at a critical concentration. The size of the discontinuity in electrical resistivity at TN diminishes with TN for the Ti-alloy system; for nonstoichiometric V2O3 it passes through a minimum and then rises significantly. These features can be rationalized almost quantitatively by assuming that acoustic lattice and ionized-impurity scattering processes govern the mobility of the itinerant charge carriers in the (V1-xTix)2O3 and V2(1-y)O3 systems, respectively. © 1983 The American Physical Society.