METAL-POLYACETYLENE SCHOTTKY BARRIER DIODES.

Abstract

The electrical properties of metal (In, Al, Pb, Sn, etc. )/polyacetyelene ((CH)//x or (CHA//y)//x)/Electrodag plus 502 (E plus 502) Schottky barrier diodes are described. The current-voltage characteristics at different temperatures are presented. The dependence of the capacitance on the frequency and on the dc bias voltage at different temperature are also investigated. The effect of acceptors (I//2 and AsF//5) on the electrical properties and aging phenomenon are reported. Finally the modeling of polyacetylene Schottky structures using current-voltage and capacitance-voltage characteristics are discussed.