Microwave Silicon Schottky-Barrier Field-Effect Transistor

Abstract

Schottky-barrier field-effect transistors have been realised in silicon epitaxial films on high-resistivity silicon substrates. The 1μm wide gates are produced by projection-masking techniques. The maximum transconductances observed are 42 mA/V per mm gate length; the maximum frequency of oscillation fmax was 8 GHz. © 1968, The Institution of Electrical Engineers. All rights reserved.