Modeling of Currents in a Vertical p-n-p Transistor with Extremely Shallow Emitter

Abstract

Detailed simulations of the collector current in a vertical poly-emitter p-n-p transistor have been carried out to verify the minority-hole mobility model by Swirhun et al. [1]. The simulations were based on the SIMS profile, incorporating all published physical parameters, and the results showed good agreement with the measurements for base doping ranging from 1018 to 1019 cm-3. In addition, the effective surface recombination velocity of electrons at the p+ poly/Si interface was found by fitting the measured base current to be ~1.4 × 105 cm/s, which is comparable to its n-p-n counterpart. © 1989 IEEE