Modeling Projection Printing of Positive Photoresists

Abstract

The accompanying papers “Optical Lithography” and Characterization of Positive Photoresist” introduce the concepts of modeling using destruction of the photoactive inhibitor compound to describe exposure and a surface-limited removal rate to describe development together with the optical exposure parameters A, B, and C and a rate relationship, R(M), which characterize the photo-resist for modeling purposes. This paper applies the model tc the projection exposure environment: exposure and developmert of photoresist are treated with a simulation model that allows computation of image surface profiles for positive photoresist exposed with a diffraction limited real image. Copyright © 1975 by the Institute of Electrical and Electronics Engineers, Inc.