Monte Carlo simulation of response of a semiconductor to periodic perturbations

Abstract

Monte Carlo simulation, as it is usually applied to carriers in semiconductors, has been extended to permit the calculation of the periodic response of the carriers to periodic external fields of any strength. To illustrate this extension the frequency-dependent differential mobility of GaAs is calculated for frequencies of 1010 to 1013 rad/sec. A second illustration is the response of GaAs to a constant electric field of 10 kV/cm and a sinusoidal electric field of 8 kV/cm and of frequency 1.88×1011 rad/sec. © 1973 American Institute of Physics.