Multilayer At03-Si02Combination (MASC) Films as a Partial H2 Diffusion Barrier for Use on Ge Surfaces

Abstract

Multilayer AI20s-Si02combination (MASe) films are shown to be superior to 8i02films for Ge surface passivation during a forming-gas annealing cycle. The Ahos is apparently much less permeable to H2 than is Si02• Hydrogen easily permeates 8i02, producing a high density of surface acceptor states on the Ge. Even in the absence of hydrogen exposure, the surface-state and fixed-charge densities under MASC films are reduced by a factor of 2 or more as compared to pyrolytic Si02 films. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.