Multiple connected quantized resistance regions

Abstract

We have examined the effects of inter-connected quantized resistance regions of Si inversion layers in magnetic fields up to 15 T at low temperatures, the quantized regions are connected in two different configurations: (1) isolated regions connected by regions of low resistance, and (2) contiguous quantized regions. Connected regions of type 1 allow the tailoring of Hall resistances to any desired rational fraction of the quantized resistance. These measured resistances are easily accurate to better than a few parts in 106 of the idealized resistance. This can be done with regions of either the same or differing Landau level index. In contrast to devices of type 1, the quantized regions of type 2 do not act as separate and distinct regions. These regions act as if they interact via the ρ{variant}xy, term which is dominated by the region characterized by the lowest Landau level index. © 1984.