My path to AVS Fellow: Non-volatile Memory processing from fundamental understanding to the promise of atomic layer etching and sustainable etch precursors

Abstract

Non-volatile memory technologies such as phase change memory (PCM) and magnetoresistive memory (MRAM) have seen various levels of success in manufacturing over the past decade. Intel/Micron’s Optane PCM memory and Everspin’s MRAM are just a few examples of recent products, while in more recent research, these same materials are also being explored as accelerator technologies for AI hardware applications. However, this has not been without the significant understanding of plasma processing to enable high fidelity pattern transfer while maintaining device performance. In this talk I will walk through first data highlighting the challenges of material volatility for both PCM and MRAM etching and how process induced modification of the material leads to deleterious device performance. Furthermore, we will review the promise of atomic layer etching in enabling new avenues to address patterning issues for MRAM and PCM and demonstrate how ALE can lead to new opportunities for sustainable future non-volatile material processing applications.