N-type organic thin-film transistor with high field-effect mobility based on a N,N^′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

Abstract

N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) thin films have been implemented into organic thin-film field-effect transistors. Mobilities up to 0.6 cm2V-1s-1 and current on/off ratios >105 were obtained. Linear regime mobilities were typically half of those measured in the saturation regime. X-ray studies in reflection mode suggest a spacing of ∼20 Å for thin evaporated films of PTCDI-C8H, which is consistent with the value of ∼21±2Å obtained from our simulations when an interdigitated packing structure is assumed. © 2002 American Institute of Physics.