New diluted magnetic semiconductors based on III-V compounds

Abstract

This paper focuses on the homogeneity of Mn ions in the new diluted magnetic semiconductor (DMS) In1-xMnxAs. It is demonstrated that, when grown at 200°C substrate temperature, the In compound produces a homogeneous alloy. The most extensive proof of this lies in detailed magnetization measurements. Supportive evidence comes from X-ray (lattice constant), optical (bandgap) and transport measurements. © 1991.