New model of a common origin for trapped holes and anomalous positive charge in MOS capacitors

Abstract

We cite evidence from electrical and EPR measurements on MOS capacitors as well as radiation damage experiments by other investigators to argue that anomalous positive charge (APC) in MOS devices results from an interaction of hydrogen with a trapped hole. The model is a modification of that used to explain the generation of radiation-induced interface states and envisions the production of H+ ions which drift toward the Si-SiO2 interface to form APC. © 1993.