New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85^oC and High Endurance 3D Crosspoint Memory

Abstract

New phase-change materials from single composite target are systematically studied. It integrated with high Indium doped AsSeGe selector, demonstrates a wide $ V_{tS}/V_{tR} $ memory window, stable 1E7 chips level write cycles (using 400ns box SET) and non-detectable $ V_{tS} $ and $ V_{tR} $ drift characteristic at 85ºC/1 day in 256kbits ADM memory arrays.