New single source precursor approach to gallium and aluminum nitride

Abstract

Single source precursors which contain preformed gallium-nitrogen and aluminum-nitrogen bonds are being considered for the growth of gallium and aluminum nitride because of their potential for overcoming problems associated with conventional precursors. Presented is the evaluation of dimethylgallium azide, Me2GaN3 (1), bisdimethylamidogallium azide, (Me2N)2GaN3 (2), and bisdimethylamidoaluminum azide, (Me2N)2AlN3 (3) as potential precursors for AlN and GaN film growth. The compounds were evaluated for stability, ease of transport, temperature of decomposition and quality of film deposited. Amorphous thin films of GaN with a band gap of 3.4 eV were deposited with 2 at 250°C. Increasing the substrate temperature to 580°C resulted in the deposition of epitaxial GaN films. Polycrystalline AlN films were grown with 3 at 600°C.