Noise Behavior of Schottky Barrier Gate Field-Effect Transistors at Microwave Frequencies

Abstract

The noise behavior of a Schottky barrier gate field-effect transistor is investigated by the use of the noise equivalent circuit. The influence of the carrier velocity saturation is estimated. The noise parameters are calculated by taking into account the influence of parasitic resistances. Measured and calculated noise parameters show good agreement in the frequency range 2–8 GHz. © 1971, IEEE. All rights reserved.