Noise Performance of Si/Si1-xGex FET's

Abstract

Noise characteristics are evaluated for SiGe/Si based n-channel MODFET's and p-channel MOSFET's. The analysis is based on a self-consistent solution of Schrodinger and Poisson's equations. The model predicts a superior minimum noise figure for an n-channel MODFET at 77 K. P-channel MOSFET's behave similar to n-channel devices operating at 300 K. Minimum noise figure decreases with increasing quantum well (QW) width for both n- and p-channel devices. However, the p-channel devices are less sensitive to QW width variation. Minimum noise temperature behaves similarly. As observed, a range of doped epilayer thickness exists where minimum noise figure is a minimum for both n- and p-channel FET's. © 1995 IEEE