Noise performance scaling in high-speed silicon RF technologies

Abstract

SiGe HBT technology has evolved rapidly during the past several years through both scaling and structural enhancements, with each contributing to improved low-noise performance. Vertical scaling has increased f<inf>T</inf> by 4× between the 0.5 μm and 0.13 μm generations, contributing to a 2.5 dB drop in noise figure at 26 GHz. At the same time, both lateral scaling as well as the move to a raised-extrinsic-base structure have reduced R<inf>B</inf> by 4.5×, contributing an additional 1 dB F<inf>min</inf> drop. The resulting 200GHz SiGe HBT achieves F<inf>min</inf> and G<inf>A</inf> values of 1.1 dB and 9 dB at 26 GHz, respectively, with a projected F<inf>min</inf> of 3.1-3.5 dB at 60 GHz. Such performance suggests that silicon enjoys great potential to serve a range of emerging wireless applications at high frequencies.