Non-parabolicity and transverse mass of electron carriers in silicon

Abstract

It is shown that band structure effects give a small but not negligible contribution to the transverse cyclotron mass enhancement in silicon [100] field effect transistor devices. For carrier concentrations of about 8 × 1012 electrons per cm2 the mass increases by approximately Δm* = 0.005, i.e. 2.4%. In opposition to the many-body corrections, the band structure enhancement increases with concentration. © 1976.