Novel crystal growth of AlGaAs/GaAs heterostructures on polar surfaces

Abstract

Results on crystal orientation dependence of Si doping in molecular beam epitaxial (MBE) GaAs are presented. High electron and hole mobilities in modulation-doped AlGaAs/GaAs heterostructures are demonstrated on many orientations rarely used in MBE. Due to different band structures for different orientations, quantum well heterostructures are likely to exhibit many interesting phenomena which are strongly orientation dependent. © 1986.