Novel reliable RF capacitive MEMS switches with photodefinable metal-oxide dielectrics

Abstract

In this paper, the design, fabrication, and measurement of reliable low-cost capacitive radio-frequency microelectromechanical systems switches with a novel fabrication approach using direct photodefinable high-k metal oxides are presented. In this approach, a radiation-sensitive metal-organic precursor is deposited via spin coating and converted to a high-k metal oxide via ultraviolet exposure. Measurements of the bridge-type switches have been done up to 40 GHz. These switches are reliable (> 340 million cycles) and exhibited low insertion loss (about 0.3 dB at 20 GHz) and better isolation (about 24 dB at 20 GHz) at frequencies below the resonant frequency as compared to switches that are fabricated using a simple silicon nitride dielectric. © 2007 IEEE.