Numerical solution of the hydrodynamic model for a one-dimensional semiconductor device

Abstract

A numerical implementation of a discretization scheme of the hydrodynamic model for submicron devices is described and applied to a one-dimensional ballistic diode.* The performance of the numerical method and the physical results of the simulation for different biases and lattice temperatures, and a brief comparison to Monte Carlo simulations, are also given. © 1987, MCB UP Limited