Numerical Solution of the Semiconductor Transport Equations with Current Boundary Conditions

Abstract

The semiconductor transport equations are solved by a hybrid finite-element method with current specified as a boundary condition at device contacts. Single carrier or bipolar devices of arbitrary shape, operating under transient or steady-state conditions, can be simulated with current sources or simple circuit elements connected to device terminals. This paper describes the numerical technique and device applications. © 1983 by The Institute of Electrical and Electronics Engineers, Inc.