Observation of resonant tunneling in silicon inversion layers

Abstract

Measurements of the temperature and carrier-density dependence of the strongly localized conductance of short silicon inversion layers are reported. At the lowest temperatures we observe well-isolated, large conductance peaks whose width and temperature dependence are only consistent with resonant tunneling and are inconsistent with Mott hopping. Several new features are observed which we believe may be the result of Coulomb interactions. © 1986 The American Physical Society.