On laser annealing and lattice melting

Abstract

The possibility of an annealing mechanism dependent on a long lived high density plasma of carriers is considered. The long lifetimes at high densities require a breakdown in the ability of energetic electrons to transfer energy to the lattice. It is shown that screening of the electron-phonon interaction is inadequate to reduce this energy transfer rate and it is argued that a suggested alternative photon scattering mechanism involving plasmons would not be able to explain the experimental properties of Si accounted for by deformation potential scattering. © 1980, All rights reserved.