On the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltages

Abstract

The temperature dependence of device performance is a critical factor that determines overall product power-performance. We show HKMG gate stacks drive significantly higher threshold temperature dependence over poly-Si/SiON. We further show that in SOI, the work-function engineering enabled by HKMG integration schemes can result in even higher Vt temperature sensitivity attributed to differences in floating body behavior. These combined effects, together with observed reduced mobility temperature sensitivity, result in higher drive current at elevated temperature. This is in contrast to poly-Si/SiON technologies where the low driven current, performance limiting corner is typically at high temperature.