Optical, electrical and contact properties of homoCVD a-Si:H films

Abstract

The optical and electrical properties of undoped HOMOCVD a-Si:H films are strikingly similar to those of GD films obtained over the same substrate temperature range. The contact properties studies reveled that the metals with θm ≤ 4.3 eV form a Schottky diode while those with θm ≤ 4.3 eV form a quasi- or ohmic low resistance contact to undoped HOMOCVD a-Si:H films without a heavily doped layer at the interface. © 1985.