Optimum crystallographic alignment for Si n-channel ballistic DGFETs

Abstract

Optimum intrinsic device switching time for a 7.5-nm gate-length Si n-channel double-gate field-effect transistor (DGFET) in the limit of pure ballistic transport occurs when channel quantization/transport directions are aligned to the 〈1 1 0〉/〈0 0 1〉 crystallographic directions, respectively. The computed switching time of 0.123 ps is 5% less than the value obtained with the more "conventional" alignment, i.e., 〈1 0 0〉/〈0 1 1〉. The change in switching time versus arbitrary crystallographic alignment is fully investigated and is compared to the case of the same DGFET made from Ge. © 2005 IEEE.