Photoemission-based photovoltage probe of semiconductor surface and interface electronic structure

Abstract

A saturation surface photovoltage is found to occur during ultraviolet photoemission at low temperatures (T20 K) on a variety of silicon (111) surfaces. Below 50 K surface recombination becomes ineffective thereby allowing flat-band conditions to be achieved with mild uv irradiation. Temperature-dependent photoemission thereby provides a simple and direct method for determining band bending and barrier heights. Results for different silicon (111) surfaces and preparation conditions are discussed. © 1986 The American Physical Society.