Physical principles of the single transistor effect

Abstract

Starting with the physics of tunneling transport through a molecule, we describe the principles underlying electrical amplification effects of a (Formula presented) molecule. We discuss in detail the consequences of intramolecular electronic-level repulsion, an effect induced by compression of the molecule, which leads to an exponential variation of the current for a minute compression of the molecule. This detailed understanding underpins the (Formula presented) amplifier. Using a planar configuration and an independent electromechanical grid, a transistor effect results from this repulsion effect. © 1998 The American Physical Society.