Polarization-Independent photodetectors with enhanced responsivity in a standard silicon-on-insulator complementary metal-oxide-semiconductor process

Abstract

A polarization-independent photodetector device is demonstrated that can be combined with electronic integrated circuits on a single chip. The photodetector device is fully compatible with the standard silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) process without requiring process modification or postprocessing. © 2009 IEEE.