Polymeric silicon‐containing resist materials

Abstract

Silicon‐containing bilayer and trilayer photoresist technology is reviewed. Multilayer resist processes of this type rely on pattern generation in a thin imaging layer followed by pattern transfer to the thick planarising underlayer by oxygen reactive ion etching (RIE). The review concentrates on materials in which the silicon is an integral part of the polymer and does not specifically address photoresists where silicon is incorporated in a post‐imaging process step (Such as top‐surface‐imaging resists). The review is not exhaustive but emphasizes instead specific examples of representative resist chemistry. Copyright © 1994 John Wiley & Sons Ltd.