Abstract
Substantial improvement of the quality of silicon epitaxial films by post-epitaxial polysilicon back-side gettering has been observed. This improvement is displayed by the reduction of defect counts revealed by the Wright etch and anodic etch and the increase of carrier lifetime characterized by the improved MOS retention time. Correlation between the defect etch pit counts and the retention time of MOS devices fabricated is reported. © 1982, The Electrochemical Society, Inc. All rights reserved.