Precise tuning of the switching field in 'implantation patterned' Co/Pt multilayers

Abstract

[Co4/Pt10]n multilayers with strong out-of-plane magnetic anisotropy were fabricated by magnetron sputtering for Pt and e-beam deposition for Co on a Si/SiO2 substrate with a 100 Å Pt buffer layer in UHV. The patterning of submicron periodic arrays was done using 30 keV He ion implantation. The technique provides an excellent opportunity for precise tuning of the switching field in 'implantation patterned' Co/Pt by controlling the distance between irradiated areas and by controlling the irradiation dose. The results of systematic characterization of arrays for different doses ranging from 1015 to 5×1016 ions/cm are presented.