Probing the structure of semiconductor superlattices and heterostructures by EXAFS

Abstract

We have applied the technique of extended X-ray absorption fine structure (EXAFS) to the study of semiconductor superlattices and heterostructures. The data provide structural information on interatomic distance and local order in several different materials. The results of direct measurement of lattice distortion in the thin films suggest that EXAFS can be employed as a useful method for studying the strained-layer superlattices. © 1986.