Reactive Ion Etching of GaAs in Chlorine and Resulting Surface Damage

Abstract

Etch rate, edge profile, surface roughness, and electrical damage have been determined for reactive ion etching (RIE) of GaAs in chlorine using a system with a loadlock. Smooth surfaces and vertical edge profiles were obtained at low pressures (<15 mt) and low powers (<0.1W/cm2). The edge profile was found to be sensitive to crystallographic orientation for long etch times (>5 min). GaAs surface damage induced by RIE was characterized by I-V and C-V measurements and by photoluminescence. The different methods of measurement were compared and correlated well. Chlorine etching in a loadlock RIE system was found to cause relatively little damage compared to argon etching. © 1990, The Electrochemical Society, Inc. All rights reserved.