Resolution in the scanning tunneling microscope

Abstract

Scanning tunneling microscopy (STM) has been used for many atomic-scale observations of metal and semiconductor surfaces. Experience has shown that a variety of effects must be considered in interpreting high-resolution data. For example, images may be distorted by the motion of tip or surface atoms which results from tip-surface interactions at small tunnel gaps. Lower-resolution studies generally appear to be quite reliable. Empirical limits on image interpretation are discussed for some of the metal, molecule and semiconductor systems which we have measured. © 1992.